Research is directed at the crystal growth, chemical synthesis and ceramic processing of new and improved oxide materials for dielectric applications. Of particular interest are structure-property relationships for ferroelectric, piezoelectric and pyroelectric ceramics in single crystal and polycrystalline form, including nanocrystalline materials and thin-layer devices. The overall goal is to develop better materials and methods for the preparation of advanced electrical ceramics and integrated devices.

Single crystals are grown by a variety of methods, including, Czochralski and flux growth, and the basic properties determined. Polycrystalline ceramics are prepared from chemically prepared powders with hot-pressing, and the role of microstructure and boundary conditions determined. Thin films are integrated with substrates by chemical solution methods, and the properties related with bulk values.

Current projects include the crystal growth of high-strain piezoelectric crystals, lead-free piezoelectrics in single crystal and polycrystalline form, high dielectric constant materials, and new dielectrics based on tantalum oxide. With respect to tantalum oxide, we are interested in the role of high-temperature phase transformations on polarizable crystal structure and novel microstructures.

Novel microstructure of Ta2O5	Domain structure of PMN-PT